On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure
- A. Reisman
- J.M. Aitken
- et al.
- 2019
- JES
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58 results for A. Ray
A study on OTS-PCM pillar cell for 3-d stackable memory
- W. Chien
- C. Yeh
- et al.
- 2018
- IEEE T-ED
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
Application of an SOI 0.12-μm CMOS technology to SoCs with low-power and high-frequency circuits
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2003
- IBM J. Res. Dev
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Nitridation of silicon in a multiwafer plasma system
- A. Reisman
- M. Berkenblit
- et al.
- 1984
- Journal of Electronic Materials
Heat dissipation from silicon chips in a vertical plate, elevated pressure cold wall system
- A. Reisman
- M. Berkenblit
- et al.
- 1982
- Journal of Electronic Materials
Plasma oxidation of silicon
- A. Ray
- 1981
- Thin Solid Films