Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
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5 results for Markus Kamp
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
- S. Strite
- A. Pelzmann
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing
- T. Suski
- J. Jun
- et al.
- 1998
- Journal of Applied Physics
Role of molecular beam epitaxy in the field of optoelectronics
- Heinz P. Meier
- M. Kamp
- et al.
- 1994
- Microelectronics Journal
Metalorganic molecular beam epitaxy of algaas using apah
- Frank Konig
- Georg Morsch
- et al.
- 1993
- Japanese Journal of Applied Physics