Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
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Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks
- H.D. Xiong
- D.M. Fleetwood
- et al.
- 2003
- Applied Physics Letters