Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al ₂O ₃/SiO _xN _y/Si(100) gate stacks

The total dose radiation response and low-frequency noise of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks were analyzed. The transistors were characterized using subthreshold current-voltage and low-frequency noise measurements. The low-noise frequency and radiation-induced threshold-voltage shifts increased with dose and decreased with postirradiation annealing. The results show that the effective radiation-induced-hole trapping efficiency in Al 2O 3 gate dielectrics was higher than for SiO 2 gate dielectrics.