A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
Publications
Date
Featured collections
Popular topics
2 results for Hidemi Ishiuchi
SODEL FET: Novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology
- Satoshi Inaba
- Kiyotaka Miyano
- et al.
- 2004
- IEEE Transactions on Electron Devices