High-performance dual-gate carbon nanotube FETs with 40-nm gate length
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2005
- IEEE Electron Device Letters
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Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor
- Y.-M. Lin
- J. Appenzeller
- et al.
- 2005
- DRC 2005