A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet DevicesNicolas LoubetT. Devarajanet al.2019IEDM 2019
Reducing time dependent line to line leakage following post CMP cleanDonald F. CanaperiSatyavolu S. Papa Raoet al.2010MRS Online Proceedings Library