Device-grade ultra-shallow junctions fabricated with antimony
- George A. Sai-Halasz
- H.B. Harrison
- 1986
- IEEE Electron Device Letters
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5 results for H.B. Harrison
Electrical activation of arsenic ion-implanted polycrystalline silicon by rapid thermal annealing
- C.Y. Wong
- Y. Komem
- et al.
- 1987
- Applied Physics Letters
Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimony
- Y. Komem
- H.B. Harrison
- 1987
- Applied Physics Letters
Inducing rapid epitaxy of polycrystalline silicon films deposited on 〈100〉 silicon by arsenic ion implantation
- Y. Komem
- C.Y. Wong
- et al.
- 1987
- Journal of Applied Physics
Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
- H.B. Harrison
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters