Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing

Abstract

The physical and electrical characteristics of gallium (Ga) ion implanted 〈100〉 silicon, annealed for times of the order of seconds to several tens of seconds for temperatures in the range of 550-900°C, are presented. It is shown that for the chosen doses of 1-6×1015/cm2 and energy of 100 keV highly electrically active p-type layers (approaching 100%) can be achieved. The highest activation being reached at temperatures below ∼650°C with no profile distortion. For temperatures in excess of 800°C this electrical activation decreases and significant profile movement occurs even for times as short as 2 s.