Influence of the substrate orientation on Ge incorporation in molecular-beam epitaxial GaAs
- B. Lee
- S.S. Bose
- et al.
- 1990
- Journal of Applied Physics
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4 results for G.E. Stillman
Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
- B. Lee
- S.S. Bose
- et al.
- 1989
- Journal of Crystal Growth
Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs
- S.S. Bose
- B. Lee
- et al.
- 1988
- Journal of Applied Physics
High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction
- W.I. Wang
- E. Mendez
- et al.
- 1986
- Journal of Applied Physics