Publication
Journal of Applied Physics
Paper

High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction

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Abstract

We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V-1 s -1 at a density of 1×1011 cm-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.

Date

01 Dec 1986

Publication

Journal of Applied Physics

Authors

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