1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
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4 results for W.R. Hunter
Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
- D.J. DiMaria
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
1 μm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE T-ED
The electron trapping behavior of silicon dioxide with ion implanted aluminum
- D.R. Young
- D.J. DiMaria
- et al.
- 1977
- Journal of Electronic Materials