Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density Jth as 160 A/cm2 and an internal loss of 5 cm-1 were obtained. © 1993.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials