Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density Jth as 160 A/cm2 and an internal loss of 5 cm-1 were obtained. © 1993.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering