About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Weak localization of two-dimensional conduction holes
Abstract
We report transport measurements which we interpret as weak localization of two-dimensional conduction holes in a GaSb-InAs-GaSb quantum-well structure. This system is unique in that it has parallel conduction channels containing both holes and electrons. The longitudinal resistance of the sample was measured for temperatures between 0.006 and 25 K; the magnetoresistance was measured in a perpendicular magnetic field. Weak localization of the holes was indicated by negative magnetoresistance and by a large logarithmic correction to the conductivity. © 1984 The American Physical Society.