Publication
VLSI Technology 2012
Conference paper

Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty

View publication

Abstract

This paper analyzes the extensive variability of random telegraph noise (RTN) responses to gate voltage and temperature in undoped nanoscale nFETs. Using comprehensive RTN measurements to extract the response parameters of >600 traps, we show that the RTN can induce delay uncertainty in dense low power (i.e., narrow devices and low V DD) 14-nm technology that may exceed 50% of the nominal delay. © 2012 IEEE.

Date

Publication

VLSI Technology 2012

Authors

Share