PaperStrain-induced quantum confinement of carriers due to extended defects in siliconH. Weman, B. Monemar, et al.Physical Review B
PaperThreshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?B. Monemar, R.M. Potemski, et al.Physical Review Letters
PaperDetection and origins of crystal defects in GaAs/GaAlAs LPE layersG.R. Woolhouse, A.E. Blakeslee, et al.Journal of Applied Physics
PaperThe formation of silicides in Mo-W Bilayer films on si substrates: A marker experimentJ.E.E. Baglin, J. Dempsey, et al.Journal of Electronic Materials