Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A recombination mechanism occurring in semiconductors containing extended defects is presented. The model is based on experimental data from hydrogen-plasma-treated silicon, containing extended defects like platelets. The broad photoluminescence bands from these samples are attributed to the heavily damaged regions surrounding the platelets, where electrons and holes can be localized in strain-induced potential wells. From a theoretical estimate it is shown that a moderate compressive strain field surrounding {111} and {100} platelets is sufficient to explain the experimental data. © 1990 The American Physical Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
P. Alnot, D.J. Auerbach, et al.
Surface Science
H.D. Dulman, R.H. Pantell, et al.
Physical Review B