Strain-induced quantum confinement of carriers due to extended defects in silicon

Abstract

A recombination mechanism occurring in semiconductors containing extended defects is presented. The model is based on experimental data from hydrogen-plasma-treated silicon, containing extended defects like platelets. The broad photoluminescence bands from these samples are attributed to the heavily damaged regions surrounding the platelets, where electrons and holes can be localized in strain-induced potential wells. From a theoretical estimate it is shown that a moderate compressive strain field surrounding {111} and {100} platelets is sufficient to explain the experimental data. © 1990 The American Physical Society.