Publication
IEDM 2016
Conference paper

Vertical channel devices enabled by through silicon via (TSV) technologies

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Abstract

Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV process as well as enable new functions. They can be easily integrated into product designs thus enabling field monitoring.

Date

31 Jan 2017

Publication

IEDM 2016

Authors

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