Publication
Journal of Applied Physics
Paper

Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes

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Abstract

The low-current I-V characteristics of AlxGa1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.

Date

09 Jul 2008

Publication

Journal of Applied Physics

Authors

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