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Journal of Applied Physics
Paper

Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes

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Abstract

The low-current I-V characteristics of AlxGa1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.

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Publication

Journal of Applied Physics

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