Publication
Applied Physics Letters
Paper

Metal-amorphous silicon-silicon tunnel rectifier

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Abstract

We report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.

Date

01 Dec 1984

Publication

Applied Physics Letters

Authors

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