John G. Long, Peter C. Searson, et al.
JES
Results are presented for x-ray photoemission and electron energy-loss (EELS) measurements of the valence bands and band-gap region of silicon dioxide fluorinated during reactive ion and plasma etching in CF4based plasmas. Valence-band photoemission reveals a band of three fluorine induced features, at binding energies of ~ 11.9, and 14.4 eV. Comparisons with the Si02valence bands and implications for bonding are discussed. Complementary results from EELS are presented along with a discussion of transitions observed in the band gap of etched silicon dioxide. A comparison of samples etched under reactive ion etching conditions with those etched under plasma etching conditions (negligible ion bombardment) indicates that the ion bombarded surfaces exhibit a reduced level of fluorination during steady-state etching. © 1988, American Vacuum Society. All rights reserved.
John G. Long, Peter C. Searson, et al.
JES
Kigook Song, Robert D. Miller, et al.
Macromolecules
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
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MRS Spring 2000