K.N. Tu
Materials Science and Engineering: A
We present here a complete experimental determination of the optical properties and electronic structure of the polymers poly(di-n-pentylsilane) and poly(di-n-hexylsilane) from 2 to 44 eV. The electronic structure revealed by these measurements is consistent with the assignment of the higher-energy transitions to the carbon-based sidechains and the lower-energy transitions to the silicon backbone. The transitions attributed to the silicon backbone correlate well with predictions by an independent band-structure calculation using the local-density approximation. © 1991 The American Physical Society.
K.N. Tu
Materials Science and Engineering: A
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
John G. Long, Peter C. Searson, et al.
JES