Paper

01 Jan 1976

V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

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Abstract

No abstract available.

Paper

Formation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacancies

J.A. Van Vechten

Physical Review B

Paper

Simple ballistic model for vacancy migration

J.A. Van Vechten

Physical Review B

Paper

Electronic dilation of si during pulsed laser annealing

J.A. Van Vechten

Japanese Journal of Applied Physics

Conference paper

EXTENDED AMORPHOUS VACANCIES. AN ALTERNATIVE TO THE SELF-INTERSTITIAL IN Si.

J.A. Van Vechten

ICDS 1984

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