Publication
Applied Physics Letters
Paper

Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation

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Abstract

Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.

Date

01 Jan 1992

Publication

Applied Physics Letters

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