Usage-based degradation of SRAM arrays due to bias temperature instability

Abstract

We propose a novel approach to estimate the workload based degradation of SRAM array stability with time due to NBTI (in PFETs) and PBTI (in NFETs). Goal is to obtain a realistic Vmin guard-band instead of optimistic (alternating stress) or pessimistic (static stress) assumptions. We also represent usage-based approach as stress-corner based approach to simplify the burn-in stress tests. © 2012 IEEE.