D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20%. © 2006 IEEE.
D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
R.A. Roy, L. Clevenger, et al.
Applied Physics Letters
K.L. Saenger, J.P. De Souza, et al.
ECS Meeting 2007
K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics