Ultraviolet and violet GaN light emitting diodes on silicon

Abstract

We report the fabrication and characterization of GaN-based double heterostructure light emitting diodes grown by molecular beam epitaxy on Si(111) substrates. Light emitting diode operation is achieved by using the conducting Si(111) substrate as a backside n contact and a standard transparent Ni/Au p contact. We observe electroluminescence peaked in the ultraviolet ∼360nm, with a full width at half maximum of ∼17nm and in the violet at ∼420 nm. Electron microscopy studies indicate a high density of threading and planar defects. Consequences of these are discussed. © 1998 American Institute of Physics.