OFC 2020
Conference paper

Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz

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We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future receiverless communication.