Two-dimensional particle models in semiconductor-device analysis

Abstract

A microscopic-scattering particle model is described that combines a 2-dimensional spatial representation of the fields with a 2-band Monte Carlo description of the scattering events. A simplified scattering law produces a particle model for the diffusion approximation. Results are shown for Si and GaAs f.e.t.s and a GaAs diode. © 1974, The Institution of Electrical Engineers. All rights reserved.