Publication
Journal of Applied Physics
Paper

Tunneling through asymmetric double-barrier quantum-well heterostructures

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Abstract

Data obtained from a set of asymmetric GaAs/AlGaAs double-barrier resonant tunneling structures is presented. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. The data confirm conclusions drawn in previous studies on symmetric structures, lending further support to the description of tunneling in terms of sequential processes and momentum randomization most likely induced by interface roughness scattering in the well.

Date

01 Dec 1990

Publication

Journal of Applied Physics

Authors

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