B. Zimmermann, E. Marclay, et al.
Journal of Applied Physics
We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
B. Zimmermann, E. Marclay, et al.
Journal of Applied Physics
J.-S. Kang, J.W. Allen, et al.
Physical Review B
P. Gueret, U. Kaufmann, et al.
Electronics Letters
G.J. Norga, C. Marchiori, et al.
Applied Physics Letters