R.W. Gammon, E. Courtens, et al.
Physical Review B
The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.
R.W. Gammon, E. Courtens, et al.
Physical Review B
R. Ghez, M.B. Small
JES
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
T.N. Morgan
Semiconductor Science and Technology