Publication
Surface Science
Paper

Tunneling in AlGaAs by Γ-X scattering

View publication

Abstract

The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.

Date

01 Jan 1988

Publication

Surface Science

Authors

Topics

Share