Silicon-oxynitride (SiON) for photonic integrated circuits
H. Salemink, F. Horst, et al.
Materials Research Society Symposium - Proceedings
The material interface of a molecular beam epitaxy grown Al 0.5Ga0.5As-GaAs heterostructure is investigated on a cross-sectional (110) cleavage plane using tunnel spectroscopy. The depleted n-type region and the electron confinement layer adjacent to the interface are identified with local current-voltage spectroscopy. The spatial width of these layers is close to 15 nm. The spectroscopy can be interpreted with the valence-band offset in the interface, and a value of 0.35 eV is found for this quantity.
H. Salemink, F. Horst, et al.
Materials Research Society Symposium - Proceedings
R. Allenspach, H. Salemink, et al.
Zeitschrift für Physik B Condensed Matter
H. Salemink, M. Johnson, et al.
Solid State Electronics
A.K. Geim, S.J. Bending, et al.
Applied Physics Letters