Wenjuan Zhu, Damon B. Farmer, et al.
Applied Physics Letters
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 10 6 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors. © 2012 American Institute of Physics.
Wenjuan Zhu, Damon B. Farmer, et al.
Applied Physics Letters
Wan Sik Hwang, Maja Remskar, et al.
Applied Physics Letters
Guangle Zhou, Y. Lu, et al.
CS MANTECH 2011
Kristof Tahy, Siyuranga Koswatta, et al.
DRC 2009