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IEEE TAS
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Transistors Based on Proximity Effect Control of the Critical Current of A Superconductor

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Abstract

The critical current of a bilayer consisting of a thin superconductor in contact with a normal conductor depends upon the thickness of the normal layer due to the proximity effect. Using one electrode of a semiconductor pn junction as the normal material, it is possible to vary the normal layer thickness by applying a voltage to the pn junction. This paper discusses the feasibility of transistors based on such structures. © 1993 IEEE

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IEEE TAS

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