J.M. Green, C.M. Osburn, et al.
Journal of Electronic Materials
An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000°C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.
J.M. Green, C.M. Osburn, et al.
Journal of Electronic Materials
Alwin E. Michel, R.H. Kastl, et al.
Applied Physics Letters
C.M. Wu, E.S. Yang, et al.
Journal of Applied Physics
J.N. Burghartz, D.A. Grützmacher, et al.
VLSI Technology 1993