Publication
Applied Physics Letters
Paper

Transient enhanced diffusion in arsenic-implanted short time annealed silicon

View publication

Abstract

An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000°C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.

Date

01 Dec 1984

Publication

Applied Physics Letters

Authors

Share