ECS Meeting 2018
Conference paper

Towards InGaAs MSDRAM capacitor-less cells

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The viability of III-V capacitor-less DRAM cells is assessed by Synopsys TCAD simulations. In particular, the MSDRAM cell is built and analyzed using InGaAs materials. Preliminary results prove distinct current levels according to the previous programming operation successfully validating the memory capabilities and motivating further investigation.