K.N. Tu
Materials Science and Engineering: A
The transfer of nitrogen-bound excitons to near-neighbor nitrogen-pair-bound excitons in GaAs1-xPx is investigated as a function of temperature. In contrast to GaP, where the transfer is rapid and efficient at low temperature, we find essentially no transfer at T=5 K. As the temperature is increased, the transfer rate for GaP grows only slowly, while that for GaAs1-xPx increases rapidly. By T=40 K, the rates are nearly the same. Two mechanisms are responsible for the transfer in the alloy: multiple trapping and variable-range hopping. © 1985 The American Physical Society.
K.N. Tu
Materials Science and Engineering: A
J.H. Stathis, R. Bolam, et al.
INFOS 2005
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
J.C. Marinace
JES