Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
The transfer of nitrogen-bound excitons to near-neighbor nitrogen-pair-bound excitons in GaAs1-xPx is investigated as a function of temperature. In contrast to GaP, where the transfer is rapid and efficient at low temperature, we find essentially no transfer at T=5 K. As the temperature is increased, the transfer rate for GaP grows only slowly, while that for GaAs1-xPx increases rapidly. By T=40 K, the rates are nearly the same. Two mechanisms are responsible for the transfer in the alloy: multiple trapping and variable-range hopping. © 1985 The American Physical Society.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Imran Nasim, Melanie Weber
SCML 2024
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering