Dual work function metal gate CMOS using CVD metal electrodes
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
Pt(O) films having compositions ranging from pure Pt to amorphous platinum oxide a-PtOx (x ∼1.4) were prepared by reactive sputtering and examined during and after heating to temperatures used for deposition and processing of high-epsilon (HE) and ferroelectric (FE) materials (400-650°C). A two stage decomposition process was observed for a-PtOx (x∼1.4) films heated in N2, with the first stage of decomposition beginning at temperatures well below 400°C. In an O2 ambient, decomposition was accompanied by formation of a crystalline Pt3O4 phase prior to complete decomposition to metallic Pt. However, the relatively slow rate of oxygen loss from a-PtOx suggests that significant amounts of oxygen should remain in Pt(O) electrodes after HE/FE layer deposition. © 1999 American Institute of Physics.
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
C. Detavernier, A.S. Özcan, et al.
MRS Proceedings 2002
D.E. Kotecki, J.D. Baniecki, et al.
IBM J. Res. Dev
C. Cabral Jr., L. Clevenger, et al.
Journal of Materials Research