J.W. Coburn, M. Chen
Journal of Applied Physics
Within the last few years there has been a considerable effort devoted to developing a more-fundamental understanding of the role of energetic ion bombardment in influencing the kinetics of reactive gas-surface interactions. Much of this work has been directed toward the silicon-fluorine system and still there are unanswered questions as to the primary role of energetic ions. In this discussion, the importance of ion-assisted gas-surface chemistry in plasma-assisted etching will be described and the current state of our microscopic understanding will be summarized. © 1987.
J.W. Coburn, M. Chen
Journal of Applied Physics
J. Ahn, C.R. Perleberg, et al.
Journal of Applied Physics
T.J. Chuang, H.F. Winters, et al.
Applications of Surface Science
H.F. Winters, J.W. Coburn
Applied Physics Letters