Mei-Chen Chuang, J.W. Coburn
Journal of Applied Physics
Within the last few years there has been a considerable effort devoted to developing a more-fundamental understanding of the role of energetic ion bombardment in influencing the kinetics of reactive gas-surface interactions. Much of this work has been directed toward the silicon-fluorine system and still there are unanswered questions as to the primary role of energetic ions. In this discussion, the importance of ion-assisted gas-surface chemistry in plasma-assisted etching will be described and the current state of our microscopic understanding will be summarized. © 1987.
Mei-Chen Chuang, J.W. Coburn
Journal of Applied Physics
J.W. Coburn, W.W. Harrison
Applied Spectroscopy Reviews
U. Gerlach-Meyer, J.W. Coburn, et al.
Surface Science
T.J. Chuang, H.F. Winters, et al.
Applications of Surface Science