FinFET performance advantage at 22nm: An AC perspective
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
The x-ray diffraction, medium energy ion scattering and transmission electron microscopy were used to study the microstructure, conformality, roughness and thermal stability of TaN thin films. The synchrotron x-ray diffraction, optical scattering and sheet resistance measurements during thermal annealing of the test structures were used to study the Cu diffusion barrier properties of plasma-enhanced atomic layer deposition (PE-ALD). It was found that the film microstructure is critical to the diffusion barrier performance. It was also found that grain boundary diffusion is dominating for polycrystalline diffusion barrier failure.
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
W. Knaepen, C. Detavernier, et al.
Thin Solid Films
D. Deduytsche, C. Detavernier, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
K. De Keyser, C. Van Bockstael, et al.
Electrochemical and Solid-State Letters