The future of silicide for CMOS contacts
R.A. Roy, C. Cabral Jr., et al.
MRS Spring Meeting 1999
The x-ray diffraction, medium energy ion scattering and transmission electron microscopy were used to study the microstructure, conformality, roughness and thermal stability of TaN thin films. The synchrotron x-ray diffraction, optical scattering and sheet resistance measurements during thermal annealing of the test structures were used to study the Cu diffusion barrier properties of plasma-enhanced atomic layer deposition (PE-ALD). It was found that the film microstructure is critical to the diffusion barrier performance. It was also found that grain boundary diffusion is dominating for polycrystalline diffusion barrier failure.
R.A. Roy, C. Cabral Jr., et al.
MRS Spring Meeting 1999
S.-L. Zhang, C. Lavoie, et al.
Journal of Applied Physics
Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
R.P. Pezzi, M. Copel, et al.
Applied Physics Letters