J.F. Ankner, J.A. Borchers, et al.
Journal of Applied Physics
The interfaces and microstructures in molecular-beam epitaxy grown iron and silver films on GaAs(001) have been investigated using high-resolution transmission electron microscopy. Stacking faults were observed in silver films deposited directly on the GaAs (type A films: Ag(500 Å)/GaAs), but not in those which included a six monolayer Fe prelayer between the Ag and the GaAs (type B films: Ag(500 Å)/Fe(6 ml)/GaAs). The introduction of this prelayer reduces the misalignment between the Ag film and GaAs substrate lattices and leads to improved epitaxial quality. In a third structure, which retained the prelayer but to which was added an overlayer of iron (type C films: Fe(500 Å)/Ag(500 Å)/Fe(6 ml)/GaAs), stacking faults were once again found. With the Fe layer between the Ag film and GaAs substrate (type B and C films) the (001) plane of Ag was parallel to the (001) plane of the Fe film and the (001) plane of GaAs substrate but with the Ag lattice rotated 45°about the [001] axis relative to the substrate. Without the Fe prelayer (type A film), the (11̄0) plane of Ag was parallel to the (001) plane of the GaAs substrate. The orientation relationships were [001]Ag parallel to [110]GaAs and [110]Ag parallel to [11̄0] GaAs.
J.F. Ankner, J.A. Borchers, et al.
Journal of Applied Physics
E.E. Marinero, R.F.C. Farrow, et al.
Applied physics communications
D. Weller, J. Sticht, et al.
MRS Spring Meeting 1993
R.F.C. Farrow, S.S.P. Parkin, et al.
Applied Physics Letters