Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
This note reviews magnetotransport data on the magnetic semiconductor Gd-xvxS4 (v = vacancy). New data on the metallic side of the transition are presented. The results for two samples may be summarized as follows: 1) At low temperatures (T ∼ 10 mK) the conductivity, σ(0) ∝ (H Hc), where Hc is a critical field below which the material is an insulator; 2) for the sample with the larger critical field, the data are not consistent with variable range hopping: 3) for H/Hc ≳ 1, the temperature dependence deviates only little from a √T law. © 1985.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Mark W. Dowley
Solid State Communications
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry