Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
This note reviews magnetotransport data on the magnetic semiconductor Gd-xvxS4 (v = vacancy). New data on the metallic side of the transition are presented. The results for two samples may be summarized as follows: 1) At low temperatures (T ∼ 10 mK) the conductivity, σ(0) ∝ (H Hc), where Hc is a critical field below which the material is an insulator; 2) for the sample with the larger critical field, the data are not consistent with variable range hopping: 3) for H/Hc ≳ 1, the temperature dependence deviates only little from a √T law. © 1985.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures