PublicationProceedings of the IEEEPaperThe Germanium Insulated-Gate Field-Effect Transistor (FET)Proceedings of the IEEEView publicationAbstractNo abstract available.Home↳ PublicationsDate01 Jan 1965PublicationProceedings of the IEEEAuthorsL.L. ChangH.N. YuIBM-affiliated at time of publicationShare
