Tunnel triode - A tunneling base transistor

Abstract

Proposed is a triode structure made of semiconductor heterojunctions where carriers of one type tunnel through the base region to which carriers of the other type are confined. In1-xGaxAs and GaSb 1-yAsy alloys are candidates for this heterostructure. As a three-terminal amplifier, the device is expected to exhibit high impedances for both input and output, a large current gain, and a marked improvement in high-frequency peformance.