Publication
Applied Physics Letters
Paper

Tunnel triode - A tunneling base transistor

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Abstract

Proposed is a triode structure made of semiconductor heterojunctions where carriers of one type tunnel through the base region to which carriers of the other type are confined. In1-xGaxAs and GaSb 1-yAsy alloys are candidates for this heterostructure. As a three-terminal amplifier, the device is expected to exhibit high impedances for both input and output, a large current gain, and a marked improvement in high-frequency peformance.

Date

26 Aug 2008

Publication

Applied Physics Letters

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