David B. Mitzi
Journal of Materials Chemistry
We have investigated hot carrier dynamics in GaSb structures, bulk and quantum wells, using picosecond time-resolved photoluminescence. Bulk samples show remarkably little carrier heating which we attribute to rapid electron relaxation within the L valleys. Quantum wells show slower cooling than the bulk, which is consistent with similar measurements of other III-V systems. Strong Auger recombination heating of the plasma is found to be responsible for maintaining relatively high temperatures at times ≥ 25 ps. © 1989.
David B. Mitzi
Journal of Materials Chemistry
Robert W. Keyes
Physical Review B
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
R. Ghez, M.B. Small
JES