M. Johnson, H.P. Meier, et al.
Applied Physics Letters
The growth terraces in molecular beam epitaxy-grown Al,Ga, -As multilayers are observed on the ultrahigh vacuum cleaved ( 110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2 off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.
M. Johnson, H.P. Meier, et al.
Applied Physics Letters
H. Salemink, O. Albrektsen
Physical Review B
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
R.F. Broom, H.P. Meier, et al.
Journal of Applied Physics