Conference paper
Photon transport transistor
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1989
The growth terraces in molecular beam epitaxy-grown Al,Ga, -As multilayers are observed on the ultrahigh vacuum cleaved ( 110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2 off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1989
H. Salemink, O. Albrektsen
ESSDERC 1991
H. Salemink, H.P. Meier, et al.
Applied Physics Letters
M. Heiblum, K. Seo, et al.
IEEE T-ED