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Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
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MRS Fall Meeting 2020
Frank Stem
C R C Critical Reviews in Solid State Sciences