Publication
Physical Review B
Paper

Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)

View publication

Abstract

Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.

Date

15 Nov 1991

Publication

Physical Review B

Authors

Topics

Share