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Micro and Nano Engineering
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ming L. Yu
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science