Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
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6 results for D. Yan
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- Z. Hang
- D. Yan
- et al.
- 1991
- Physical Review B
Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs
- Yichun Yin
- D. Yan
- et al.
- 1991
- Physical Review B
Low surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters
Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Applied Physics Letters
Measurement of absolute Al concentration in AlxGa1-xAs
- D. Yan
- J. Paul Farrell
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B