Ta and TaN adhesion to high-temperature fluorinated polyimides. Surface and interface chemistry

Abstract

The practical adhesion of Cu/Ta to high-temperature fluorinated polyimides (FPIs) was initially good but failed after the reliability test involving treatment under the FPI curing condition five times (T5). But a thin layer (40 nm) of TaN greatly improved the reliabilityof the Cu/Ta-to-FPI adhesion. Both CF4 and in situ Ar plasma treatments of FPIs prior to metal deposition enhanced the metal-to-FPI adhesion strength. CF4 plasma enriches the FPI surface with fluorine atoms and most of fluorine is bound to carbon as CF3, CF2, and CF. Ar plasma first destroys CF3 and then C=O groups of the FPIs to yield a polar surface. The locus of failure by a 90° peel test was found to be within the Ar-plasma-modified FPI layer but it moved toward the bulk of FPI, i.e. away from the metal-polymer interface, afterthe T5 reliability test. The locus of failure in the case of weak adhesion where no plasma treatment was done on FPI films was in the near-interface region within the FPI layer, and the failure seemed to occur in the weak boundary layers of FPI surfaces. Plasma treatment removesweak boundary layers and also increases FPI surface roughness. These two effects combined improved the metal-to-FPI practical adhesion. © VSP 1998.